A High Breakdown Voltage Two Zone Step Doped Lateral Bipolar Transistor on Buried Oxide Thick Step
نویسندگان
چکیده
---A novel two zone step doped (TZSD) lateral bipolar junction transistor (LBJT) on silicon-oninsulator (SOI) with buried oxide thick step (BOTS) is proposed. The concept of linear doping and linear oxide thickness for increasing the breakdown voltage has been replaced by using step in doping and step in oxide thickness. These steps result in the creation of additional electric field peaks in the collector drift region and increases the uniformity of lateral surface electric field and hence the breakdown voltage. Numerical simulations demonstrate that the breakdown voltage of the proposed device is more than 200 % higher than the conventional device
منابع مشابه
A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement
In this paper, a near-triangular buried-oxide partial silicon-on-insulator (TB-PSOI) lateral double-diffused MOS field-effect transistor is proposed. The electric field and electrostatic potential in this structure are modified by the gradual buried-oxide thickness increase. The modification includes the addition of a new peak in the electric field in comparison to that of the conventional PSOI...
متن کاملOptimum Design for Eliminating Back Gate Bias Effect of Silicon-on- insulator Lateral Double Diffused Metal-oxide-semiconductor Field Effect Transistor with Low Doping Buried Layer
An optimum design with silicon-on-insulator (SOI) device structure was proposed to eliminate back gate bias effect of the lateral double diffused metal-oxide-semiconductor field effect transistor (LDMOSFET) and to improve breakdown voltage. The SOI structure was characterized by low doping buried layer (LDBL) inserted between the silicon layer and the buried oxide layer. The LDBL thickness is a...
متن کاملSilicon - on - Insulator Lateral - Insulated - Gate - Bipolar - Transistor with Built - in Self - anti - ESD Diode
Power SOI (Silicon-On-Insulator) devices have an inherent sandwich structure of MOS (MetalOxide-Semiconductor) gate which is very easy to suffer ESD (Electro-Static Discharge) overstress. To solve this reliability problem, studies on design and modification of a built-in self-anti-ESD diode for a preliminarily optimized high voltage SOI LIGBT (Lateral-Insulated-Gate-Bipolar-Transistor) were car...
متن کاملProcess and device simulation of power VDMOS transistors in Bipolar/CMOS/DMOS technology
This paper presents two-dimensional process and device simulation results of power VDMOS one-cell in a Bipolar/CMOS/DMOS technology. The VDMOS process simulation is divided for more accuracy in three bricks: buried layer, active zone and sinker; it takes into account all thermal budget. For process simulation, good results on sheet resistance, lateral and vertical doping diffusions are compared...
متن کاملPlasma-polymerized multistacked bipolar gate dielectric for organic thin-film transistors
A 10-layer stack of bipolar gate dielectric was formed by sequential layer-by-layer deposition using pulsed radio frequency (RF) plasma polymerization of allylamine and vinyl acetic acid monomers. Due to polar groups localized at the interfaces between each consecutive layer by alternating amine (–NH2) and carboxylic acid (–COOH) functional groups, a 60 nm thick multilayer structure demonstrate...
متن کامل